Product Summary
The EM6K6 is a 1.8V Drive Nch+Nch MOSFET. It is used in switching.
Parametrics
EM6K6 absolute maximum ratings: (1)Drain.source voltage VDSS: 20V; (2)Gate.source voltage VGSS: ±8V; (3)Drain current Continuous ID: ±300mA; Pulsed IDP: ±600mA; (4)Total power dissipation PD: 150mW / TOTAL; (5)Channel temperature Tch: 150℃; (6)Storage temperature Tstg: -55 to +150℃.
Features
EM6K6 features: (1)The MOSFET elements are independent, eliminating mutual interference; (2)Mounting cost and area can be cut in half; (3)Low on-resistance; (4)Low voltage drive (1.8V) makes this device ideal for portable equipment.
Diagrams
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![]() EM6K6T2R |
![]() ROHM Semiconductor |
![]() MOSFET Small Signal Dual N-CH 20V .3A .15W |
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![]() EM6K1 |
![]() Other |
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![]() Negotiable |
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![]() EM6K1T2R |
![]() ROHM Semiconductor |
![]() MOSFET 2N-CH 30V .1A |
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![]() EM6K6T2R |
![]() ROHM Semiconductor |
![]() MOSFET Small Signal Dual N-CH 20V .3A .15W |
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![]() EM6K7T2R |
![]() ROHM Semiconductor |
![]() MOSFET TRNSISTR DUAL MOSFET |
![]() Data Sheet |
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![]() EM6K31T2R |
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![]() TRANS MOSFET N-CH 60V 0.25A EMT6 |
![]() Data Sheet |
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