(China (Mainland))
Product Summary
The 2SK1070PIDTL-E is a silicon N-channel junction FET. It is widely applied in low frequency / high frequency amplifier.
Parametrics
2SK1070PIDTL-E absolute maximum ratings: (1)Gate to drain voltage, VGDO: 22V; (2)Gate-to-Source Voltage, VGSO: 22V; (3)Drain Current, ID: 50mA; (4)Gate current, IG: 10mA; (5)Allowable Power Dissipation, PCH: 150mW; (6)Channel Temperature, TCH: 150℃; (7)Storage Temperature, Tstg: -55 to +150℃.
Features
2SK1070PIDTL-E features: (1)Gate cutoff current, IGSS: 10nA; (2)Gate to source breakdown voltage, V(BR)GSS: 22V; (3)Drain current, IDSS: 12 to 40mA; (4)Gate to source cutoff voltage, VGS(off): 0 to 2.5V; (5)Forward transfer admittance, |yfs|: 20 to 30mS; (6)Input capacitance Ciss: 9pF.
Diagrams
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