Product Summary

The 2SK1875-V is an N channel juction type field effect transistor.

Parametrics

2SK1875-V absolute maximum ratings: (1)gate-drain voltage, VGDS: -20V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 100 mW; (4)junction temperature, Tj: 125℃; (5)storage temperature range, Tstg: -55 to 125℃.

Features

2SK1875-V features: (1)high frequency amplifier application; (2)AM high frequency amplifier application; (3)audio frequency amplifier application.

Diagrams

2SK1875-V package dimension

2SK1056
2SK1056

Other


Data Sheet

Negotiable 
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2SK1057

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Data Sheet

Negotiable 
2SK1058
2SK1058

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Data Sheet

Negotiable 
2SK1058-E
2SK1058-E


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Data Sheet

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2SK1061
2SK1061

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Data Sheet

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2SK1062
2SK1062

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Data Sheet

Negotiable