(China (Mainland))
Product Summary
The L1SS400T1G is a silicon epitaxial planar switching diode.
Parametrics
L1SS400T1G absolute maximum ratings: (1)Peak reverse voltage, VRM: 90V; (2)DC reverse voltage, VR: 80V; (3)Peak forward current, IFM: 225mA; (4)Mean rectifying current, IO: 100mA; (5)Surge current (1s), Isurge: 500mA; (6)Junction temperature, Tj: 125℃; (7)Storage temperature, Tstg: -55 to +125℃.
Features
L1SS400T1G features: (1)Extremely small surface mounting type; (2)High Speed; (3)High reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 L1SS400T1G |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
L1SS181LT1G |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
L1SS184LT1G |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
L1SS226LT1G |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
L1SS355T1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
L1SS355T1G |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
L1SS356T1G |
Other |
|
Data Sheet |
Negotiable |
|
||||
