Product Summary

The IIRFP31N50L is a Power MOSFET.

Parametrics

IRFP31N50L absolute maximum ratings: (1)Drain-Source Voltage VDS: 500V; (2)Gate-Source Voltage VGS: ± 30V; (3)Continuous Drain Current VGS at 10 V, TC = 25 ℃, ID: 31A; TC = 100 ℃: 20 A; (4)Pulsed Drain Currenta IDM: 124W/℃; (5)Linear Derating Factor: 3.7 W/℃; (6)Single Pulse Avalanche Energy EAS: 460 mJ; (7)Repetitive Avalanche Currenta IAR: 31 A; (8)Repetitive Avalanche Energya EAR: 46 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 460 W; (10)Peak Diode Recovery dV/dtc dV/dt: 19 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150; (12)℃; (13)Soldering Recommendations (Peak Temperature) for 10 s: 300d; (14)Mounting Torque: 6-32 or M3 screw: 10 lbf · in; 1.1 N · m.

Features

IRFP31N50L features: (1)Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications; (2)Lower Gate Charge Results in Simpler Drive Requirements; (3)Enhanced dV/dt Capabilities Offer Improved Ruggedness; (4)Higher Gate Voltage Threshold Offers Improved Noise Immunity; (5)Lead (Pb)-free Available.

Diagrams

IRFP31N50L diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFP31N50L
IRFP31N50L
Vishay/Siliconix
MOSFET N-Chan 500V 31 Amp
Data Sheet
0-331: $8.78
331-500: $8.05
IRFP31N50LPBF
IRFP31N50LPBF
Vishay/Siliconix
MOSFET N-Chan 500V 31 Amp
Data Sheet
0-1: $3.82
1-10: $3.07
10-100: $2.80
100-250: $2.52