(China (Mainland))
Product Summary
The BF998R is a silicon N_Channel MOSFET tetrode.
Parametrics
BF998R absolute maximum ratings: (1)Drain-source voltage VDS: 12 V; (2)Continuous drain current ID: 30 mA; (3)Gate 1/ gate 2-source current ±IG1/2SM: 10mA; (4)Total power dissipation: 200mA; (5)Storage temperature Tstg: -55 to 150 ℃; (6)Channel temperature Tch: 150℃.
Features
BF998R features: (1)Short-channel transistor with high S / C quality factor; (2)For low-noise, gain-controlled input stage up to 1 GHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BF998R |
Other |
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Data Sheet |
Negotiable |
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BF998R,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE7 MOS-RFSS |
Data Sheet |
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BF998R,235 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal Dual N-Channel 12V 30mA 200mW |
Data Sheet |
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BF998RW |
Other |
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Data Sheet |
Negotiable |
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