(China (Mainland))
Product Summary
The BF998 is a silicon N_Channel MOSFET tetrode.
Parametrics
BF998 absolute maximum ratings: (1)Drain-source voltage VDS: 12 V; (2)Continuous drain current ID: 30 mA; (3)Gate 1/ gate 2-source current ±IG1/2SM: 10mA; (4)Total power dissipation: 200mA; (5)Storage temperature Tstg: -55 to 150 ℃; (6)Channel temperature Tch: 150℃.
Features
BF998 features: (1)Short-channel transistor with high S / C quality factor; (2)For low-noise, gain-controlled input stage up to 1 GHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BF998 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
BF998,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal N-CH DUAL GATE 12V VHF/UHF |
Data Sheet |
|
|
||||||||||||
|
BF998,235 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal Dual N-Channel 12V 30mA 200mW |
Data Sheet |
|
|
||||||||||||
|
BF998... |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
BF998E6327 |
Infineon Technologies |
MOSFET N-CH 12V 200MA SOT-143 |
Data Sheet |
|
|
||||||||||||
|
BF998R |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BF998R,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE7 MOS-RFSS |
Data Sheet |
|
|
||||||||||||
 |
BF998WR,115 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS |
Data Sheet |
|
|
||||||||||||
