(China (Mainland))
Product Summary
The 1SS302 is a TOSHIBA Diode. It is Silicon Epitaxial Planar Type. The device is designed for ultra high speed switching applications.
Parametrics
1SS302 absolute maximum ratings: (1)Maximum (peak) reverse voltage VRM: 85 V; (2)Reverse voltage VR: 80 V; (3)Maximum (peak) forward current IFM: 300 mA; (4)Average forward current IO: 100 mA; (5)Surge current (10ms) IFSM: 2 A; (6)Power dissipation P: 100 mW; (7)Junction temperature Tj: 125 ℃; (8)Storage temperature Tstg: -55 to 125 ℃.
Features
1SS302 features: (1)Small package: SC-70; (2)Low forward voltage: VF (3) = 0.90V (typ.); (3)Fast reverse recovery time: trr = 1.6ns (typ.); (4)Small total capacitance: CT = 0.9pF (typ.).
Diagrams
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 1SS302 |
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1SS300 |
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1SS300(T5L.H) |
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1SS301 |
Other |
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1SS301SU,LF |
Toshiba |
Rectifiers High Speed 0.9V VF 85Vrm 80Vr 300mA |
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1SS302 |
Other |
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Negotiable |
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1SS303 |
Other |
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Data Sheet |
Negotiable |
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