1SS302

TOSHIBA Diode, Silicon Epitaxial Planar Type, SC-70, 0.90V, 1.6ns, 0.9pF, 300 mA

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Price:: US $0.05~0.06 / piece [Get Latest Price]

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	US $0.05~0.06

PartNumber:: 1SS302

Brand:: Toshiba Semiconductor - Toshiba | Pack: SC | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-10

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Part Number:1SS302
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Product Summary

The 1SS302 is a TOSHIBA Diode. It is Silicon Epitaxial Planar Type. The device is designed for ultra high speed switching applications.

Parametrics

1SS302 absolute maximum ratings: (1)Maximum (peak) reverse voltage VRM: 85 V; (2)Reverse voltage VR: 80 V; (3)Maximum (peak) forward current IFM: 300 mA; (4)Average forward current IO: 100 mA; (5)Surge current (10ms) IFSM: 2 A; (6)Power dissipation P: 100 mW; (7)Junction temperature Tj: 125 ℃; (8)Storage temperature Tstg: -55 to 125 ℃.

Features

1SS302 features: (1)Small package: SC-70; (2)Low forward voltage: VF (3) = 0.90V (typ.); (3)Fast reverse recovery time: trr = 1.6ns (typ.); (4)Small total capacitance: CT = 0.9pF (typ.).