Product Summary

The BAS16 E6327 is a kind of silicon switching diode.

Parametrics

BAS16 E6327 absolute maximum ratings: (1)Diode reverse voltage VR: 80 V; (2)Peak reverse voltage VRM: 85 V; (3)Forward current IF: 250 mA; (4)Non-repetitive peak surge forward current: 4.5 A; (5)Total power dissipation, TS ≤ 54℃: 370 mW; (6)Junction temperature: 150 ℃; (7)Storage temperature Tstg: -65 to 150℃.

Features

BAS16 E6327 features:(1)For high-speed switching applications; (2)Pb-free (RoHS compliant) package1); (3)Qualified according AEC Q101.

Diagrams

BAS16 E6327 test circuit

BAS101,215
BAS101,215
NXP Semiconductors
Diodes (General Purpose, Power, Switching) Diode Switching 300V 0.2A 3-Pin
Data Sheet
0-1: $0.05
1-25: $0.05
25-100: $0.05
100-250: $0.04
BAS101S,215
BAS101S,215
NXP Semiconductors
Diodes (General Purpose, Power, Switching) Diode Switching 600V 0.1A 3-Pin
Data Sheet
0-1: $0.05
1-25: $0.05
25-100: $0.05
100-250: $0.04
BAS11
BAS11
Other

Data Sheet
Negotiable 
BAS116
BAS116
Taiwan Semiconductor
Diodes (General Purpose, Power, Switching) Switching diode 225 mW
Data Sheet
0-3000: $0.01
3000-6000: $0.01
BAS116,215
BAS116,215
NXP Semiconductors
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Data Sheet
0-1: $0.03
1-25: $0.02
25-100: $0.02
100-250: $0.02
BAS116,235
BAS116,235
NXP Semiconductors
Rectifiers DIODE LOW LEAKAGE TAPE-11
Data Sheet
0-1: $0.05
1-25: $0.04
25-100: $0.04
100-250: $0.04