(China (Mainland))
Product Summary
The JANTX2N6798 is a repetitive avalanche AND dv/dt rated HEXFET transistor. The JANTX2N6798 features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
JANTX2N6798 absolute maximum ratings: (1)Continuous Drain Current: 5.5 A; (2)Continuous Drain Current: 3.5 A; (3)Pulsed Drain Current: 22 A; (4)Max. Power Dissipation: 25 W; (5)Linear Derating Factor: 0.20 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy: 54 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Operating Junction: -55 to 150 ℃; (10)Storage Temperature Range: -55 to 150 ℃; (11)Lead Temperature 300 ℃(0.063 in. (1.6mm) from case for 10s); (12)Weight: 0.98(typical) g.
Features
JANTX2N6798 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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JANTX2N6798 |
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