(China (Mainland))
Product Summary
The IRGP35B60PDPBF is an IGBT with ultrafast soft recovery diode. Applications include: Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Uninterruptable Power Supplies, Consumer Electronics Power Supplies.
Parametrics
IRGP35B60PDPBF absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 60 A; (3)IC @ TC = 100℃ Continuous Collector Current: 34 A; (4)ICM Pulse Collector Current (Ref. Fig. C.T.4): 120 A; (5)ILM Clamped Inductive Load Current: 120 A; (6)IF @ TC = 25℃ Diode Continous Forward Current: 40 A; (7)IF @ TC = 100℃ Diode Continous Forward Current: 15 A; (8)IFRM Maximum Repetitive Forward Current: 60 A; (9)VGE Gate-to-Emitter Voltage: ±20 V; (10)PD @ TC = 25℃ Maximum Power Dissipation: 308 W; (11)PD @ TC = 100℃ Maximum Power Dissipation: 123 W; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55 to +150 ℃; (13)Soldering Temperature for 10 sec.: 300 ℃ (0.063 in. (1.6mm) from case); (14)Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m).
Features
IRGP35B60PDPBF features: (1)NPT Technology, Positive Temperature Coefficient; (2)Lower VCE(SAT); (3)Lower Parasitic Capacitances; (4)Minimal Tail Current; (5)HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode; (6)Tighter Distribution of Parameters; (7)Higher Reliability.
Diagrams
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 IRGP35B60PDPBF |
International Rectifier |
IGBT Transistors 600V Warp2 150kHz |
Data Sheet |
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IRGP20B60PDPBF |
International Rectifier |
IGBT Transistors 600V Warp2 150kHz |
Data Sheet |
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