Product Summary

The 2SD2351T106W is a general purpose transistor.

Parametrics

2SD2351T106W absolute maximum ratings: (1)Collector to base voltage, VCBO: 60V; (2)Collector to emitter voltage: 50V; (3)Emitter to base voltage, VEBO: 12V; (4)Peak collector current, ICP: 0.15A; (5)Collector current, IC: 0.2A; (6)Collector power dissipation: 0.2W; (7)Junction temperature: 150℃; (8)Storage temperature: –55 to +150℃.

Features

2SD2351T106W features: (1)High DC current gain; (2)High emitter-base voltage; (3)Low saturation voltage.

Diagrams

2SD2351T106W dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SD2351T106W
2SD2351T106W
ROHM Semiconductor
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Data Sheet
0-1: $0.27
1-10: $0.20
10-100: $0.14
100-500: $0.08
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(USD)		 Quantity
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1-10: $0.26
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1-10: $0.28
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