(China (Mainland))
Product Summary
The 2SD1898T100R is an epitaxial planer type NPN silicon transistor.
Parametrics
2SD1898T100R absolute maximum ratings: (1)Collector-base voltage, VCBO: 120V; (2)Collector-emitter voltage, VCEO: 80V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 1A (DC); (5)Collector current, IC: 2A (Pulse); (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
2SD1898T100R features: (1)High VCEO, VCEO=80V; (2)High IC, IC=1A (DC); (3)Good hFE linearity; (4)Low VCE (sat); (5)Complements the 2SB1260 / 2SB1181.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SD1898T100R |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 80V 1A |
Data Sheet |
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2SD1000 |
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2SD1001 |
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2SD1006 |
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2SD1007 |
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Data Sheet |
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