Product Summary
The MBRF20H100CTG is a switchmode schottky power rectifirer. The switchmode power rectifier MBRF20H100CTG employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry of the MBRF20H100CTG features epitaxial construction with oxide passivation and metal overlay contact. The MBRF20H100CTG is ideally suited for use as rectifiers in very low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Parametrics
MBRF20H100CTG absolute maximum ratings: (1)Peak Repetitive Reverse Voltage: 100 V; (2)Average Rectified Forward Current: 10 A; (3)Peak Repetitive Forward Current: 20 A; (4)Nonrepetitive Peak Surge Current: 250 A; (5)Operating Junction Temperature: +175 ℃; (6)Storage Temperature: -65 to +175 ℃; (7)Voltage Rate of Change (Rated VR) dv/dt: 10,000 V/μs; (8)Controlled Avalanche Energy: 200 mJ; (9)ESD Ratings: Machine Model = C: > 400V.
Features
MBRF20H100CTG features: (1)Low Forward Voltage: 0.64 V @ 125℃; (2)Low Power Loss/High Efficiency; (3)High Surge Capacity; (4)175℃ Operating Junction Temperature; (5)20 A Total (10 A Per Diode Leg); (6)Guard-Ring for Stress Protection; (7)Pb-Free Packages are Available.
Diagrams
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![]() MBRF20H100CTG |
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![]() Schottky (Diodes & Rectifiers) 20A100V H-SERIES SCHOTTK |
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![]() MBRF20H100CTGE3/45 |
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