(China (Mainland))
Product Summary
The 2SC2712-GR is an NPN silicon transistor.
Parametrics
2SC2712-GR absolute maximum ratings: (1)Collector to Base Voltage, VCBO: 60V; (2)Collector to Emitter Voltage, VCEO: 50V; (3)Emitter to Base Voltage, VEBO: 5V; (4)Collector current, IC: 150A; (5)Base current, IB: 30A; (6)Collector power dissipation, PC: 150A; (7)Junction Temperature, Tj: 125℃; (8)Storage Temperature Range, Tstg: -55 to +125℃.
Features
2SC2712-GR features: (1)High voltage and high current: VCEO = 50 V, IC = 150 mA (max); (2)Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.); (3)High hFE: hFE=70, 700; (4)Low noise: NF=1dB (typ.), 10dB (max).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SC2712-GR |
Other |
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Data Sheet |
Negotiable |
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2SC2712-GR(TE85L,F |
Toshiba |
Transistors Bipolar (BJT) 150mA 50V |
Data Sheet |
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2SC2712-GR(T5L,F,T) |
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TRANS NPN 50V 150MA S-MINI |
Data Sheet |
Negotiable |
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