(China (Mainland))
Product Summary
The 2SB1132FD5T100R is a Medium Power Transistor.
Parametrics
2SB1132FD5T100R absolute maximum ratings: (1)collector-base voltage: -40 V; (2)collector-emitter voltage: -32 V; (3)emitter-base voltage: -5 V; (4)collector current: -1 A (DC), -2 A (Pulse); (5)collector power dissipation: 0.5 W; (6)junction temperature: 150 ℃; (7)storage temperature: -55 to +150 ℃.
Features
2SB1132FD5T100R absolute maximum ratings: (1)Peak reverse voltage, VRM: 90V; (2)DC reverse voltage, VR: 80V; (3)Peak forward current, IFM: 225mA; (4)Mean rectifying current, IO: 100mA; (5)Surge current (1s), Isurge: 500mA; (6)Junction temperature, Tj: 125℃; (7)Storage temperature, Tstg: -55 to +125℃.
Diagrams
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 2SB1000 |
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2SB1000A |
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2SB1001 |
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Negotiable |
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2SB1002 |
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2SB1005 |
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2SB1007 |
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Negotiable |
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